Electronic Engineering McqsVLSI Design 100+ MCQ & Answer VLSI Design | page-03 | Electronic Engineering MCQ And Answer 28/01/2025 DSN MARATHI Last Updated on: 28/10/2025 21. Enhancement mode device acts as switch, depletion mode acts as _____ switch A. open, closed B. closed, open C. open, open D. close, close Answer Option : A 22. Depletion mode MOSFETs are more commonly used as A. switches B. resistors C. buffers D. capacitors Answer Option : B 23. Enhancement mode MOSFETs are more commonly used as A. switches B. resistors C. buffers D. capacitors Answer Option : A 24. Depletion mode transistor should be large. A. true B. false Answer Option : A 25. Which expression is true? A. charging time < discharging time B. charging time > discharging time C. charging time = discharging time D. charging time and discharging time are not related Answer Option : B 26. Overheating in device occurs due to less number of resistors per unit area. A. true B. false Answer Option : B 27. In n channel MOSFET, ________ is constant A. channel length B. channel width C. channel depth D. channel concentration Answer Option : A 28. VLSI technology uses ________ to form integrated circuit A. transistors B. switches C. diodes D. buffers Answer Option : A 29. Medium scale integration has A. ten logic gates B. fifty logic gates C. hundred logic gates D. thousands logic gates Answer Option : C 30. The difficulty in achieving high doping concentration leads to A. error in concentration B. error in variation C. error in doping D. distrubution error Answer Option : B
21. Enhancement mode device acts as switch, depletion mode acts as _____ switch A. open, closed B. closed, open C. open, open D. close, close Answer Option : A
22. Depletion mode MOSFETs are more commonly used as A. switches B. resistors C. buffers D. capacitors Answer Option : B
23. Enhancement mode MOSFETs are more commonly used as A. switches B. resistors C. buffers D. capacitors Answer Option : A
25. Which expression is true? A. charging time < discharging time B. charging time > discharging time C. charging time = discharging time D. charging time and discharging time are not related Answer Option : B
26. Overheating in device occurs due to less number of resistors per unit area. A. true B. false Answer Option : B
27. In n channel MOSFET, ________ is constant A. channel length B. channel width C. channel depth D. channel concentration Answer Option : A
28. VLSI technology uses ________ to form integrated circuit A. transistors B. switches C. diodes D. buffers Answer Option : A
29. Medium scale integration has A. ten logic gates B. fifty logic gates C. hundred logic gates D. thousands logic gates Answer Option : C
30. The difficulty in achieving high doping concentration leads to A. error in concentration B. error in variation C. error in doping D. distrubution error Answer Option : B
