Electronic Engineering McqsVLSI Design 100+ MCQ & Answer VLSI Design | page-02 | Electronic Engineering MCQ And Answer January 28, 2025 DSN MARATHI 11. The condition for linear region is A. Vgs lesser than Vt B. Vgs greater than Vt C. Vds lesser than Vgs D. Vds greater than Vgs Answer Option : B 12. As source drain voltage increases, channel depth A. increases B. decreases C. logarithmically increases D. exponentially increses Answer Option : B 13. Speed power product is measured as the product of A. gate switching delay and gate power dissipation B. gate switching delay and gate power absorption C. gate switching delay and net gate power D. gate power dissipation and absorption Answer Option : A 14. MOS transistors consists of A. semiconductor layer B. metal layer C. layer of silicon-di-oxide D. all of the mentioned Answer Option : D 15. In MOS transistors, _______ is used for their gate A. metal B. silicon-di-oxide C. polysilicon D. gallium Answer Option : C 16. The gate region consists of A. insulating layer B. conducting layer C. lower metal layer D. p type layer Answer Option : B 17. Electrical charge flows from A. source to drain B. drain to source C. source to ground D. source to gate Answer Option : A 18. Source in MOS transistors is doped with ________ material A. n-type B. p-type C. n & p type D. none of the mentioned Answer Option : A 19. In N channel MOSFET which is the more negative of the elements? A. source B. gate C. drain D. source and drain Answer Option : A 20. If the gate is given sufficiently large charge, electrons will be attracted to A. drain region B. channel region C. switch region D. bulk region Answer Option : B
11. The condition for linear region is A. Vgs lesser than Vt B. Vgs greater than Vt C. Vds lesser than Vgs D. Vds greater than Vgs Answer Option : B
12. As source drain voltage increases, channel depth A. increases B. decreases C. logarithmically increases D. exponentially increses Answer Option : B
13. Speed power product is measured as the product of A. gate switching delay and gate power dissipation B. gate switching delay and gate power absorption C. gate switching delay and net gate power D. gate power dissipation and absorption Answer Option : A
14. MOS transistors consists of A. semiconductor layer B. metal layer C. layer of silicon-di-oxide D. all of the mentioned Answer Option : D
15. In MOS transistors, _______ is used for their gate A. metal B. silicon-di-oxide C. polysilicon D. gallium Answer Option : C
16. The gate region consists of A. insulating layer B. conducting layer C. lower metal layer D. p type layer Answer Option : B
17. Electrical charge flows from A. source to drain B. drain to source C. source to ground D. source to gate Answer Option : A
18. Source in MOS transistors is doped with ________ material A. n-type B. p-type C. n & p type D. none of the mentioned Answer Option : A
19. In N channel MOSFET which is the more negative of the elements? A. source B. gate C. drain D. source and drain Answer Option : A
20. If the gate is given sufficiently large charge, electrons will be attracted to A. drain region B. channel region C. switch region D. bulk region Answer Option : B
