Electronic Engineering McqsVLSI Design 100+ MCQ & Answer VLSI Design | page-05 | Electronic Engineering MCQ And Answer January 28, 2025 DSN MARATHI 41. In nMOS device, gate material could be A. silicon B. polysilicon C. boron D. phosporus Answer Option : B 42. The commonly used bulk substrate in nMOS fabrication is A. silicon crystal B. silicon-on-sapphire C. phosporus D. silicon-di-oxide Answer Option : C 43. In nMOS fabrication, etching is done using A. plasma B. hydrochloric acid C. sulphuric acid D. sodium chloride Answer Option : A 44. Heavily doped polysilicon is deposited using A. chemical vapour decomposition B. chemical vapour deposition C. chemical deposition D. dry deposition Answer Option : B 45. In diffusion process, _____ impurity is desired A. n type B. p type Answer Option : A 46. Contact cuts are made in A. source B. drain C. metal layer D. diffusion layer Answer Option : A 47. Interconnection pattern is made on A. polysilicon layer B. silicon-di-oxide layer C. metal layer D. diffusion layer Answer Option : C 48. SIlicon-di-oxide is a good insulator. A. true B. false Answer Option : A 49. ______ is used to suppress unwanted conduction A. phosporus B. boron C. silicon D. oxygen Answer Option : B 50. Which is used for the interconnection? A. boron B. oxygen C. aluminium D. silicon Answer Option : C
41. In nMOS device, gate material could be A. silicon B. polysilicon C. boron D. phosporus Answer Option : B
42. The commonly used bulk substrate in nMOS fabrication is A. silicon crystal B. silicon-on-sapphire C. phosporus D. silicon-di-oxide Answer Option : C
43. In nMOS fabrication, etching is done using A. plasma B. hydrochloric acid C. sulphuric acid D. sodium chloride Answer Option : A
44. Heavily doped polysilicon is deposited using A. chemical vapour decomposition B. chemical vapour deposition C. chemical deposition D. dry deposition Answer Option : B
47. Interconnection pattern is made on A. polysilicon layer B. silicon-di-oxide layer C. metal layer D. diffusion layer Answer Option : C
49. ______ is used to suppress unwanted conduction A. phosporus B. boron C. silicon D. oxygen Answer Option : B
50. Which is used for the interconnection? A. boron B. oxygen C. aluminium D. silicon Answer Option : C
