Electronic Engineering McqsVLSI Design 100+ MCQ & Answer VLSI Design | page-09 | Electronic Engineering MCQ And Answer January 28, 2025 DSN MARATHI 81. The dopants are introduced in the active areas of silicon by: a) Diffusion process b A. Diffusion process B. Ion Implantaion process C. Chemical Vapour Deposition D. Either Diffusion or Ion Implantaion Process Answer Option : D 82. To grow the polysilicon gate layer, the chemical used for chemical vapour deposition is: a A. Silicon Nitride(Si4N3) B. Silane gas(SiH4 ) C. Silicon oxide D. None of the mentioned Answer Option : B 83. The process by which Aluminium is grown over the entire wafer , also filling the contact cuts is: A. Sputtering B. Chemical vapour deposition C. Epitaxial growth D. Ion Implantation Answer Option : A 84. Chemical Mechanical Polisihing is used to: A. Remove silicon oxide B. Remove silicon nitride and pad oxide C. Remove polysilicon gate layer D. Reduce the size of the layout Answer Option : B 85. Gate oxide layer consists of A. SiO2 layer, overlaid with a few layers of an oxynitrided oxide b) Only SiO2 Layer c B. Only SiO2 Layer C. SiO2 layer with Polysilicon Layer D. SiO2 layer and stack of epitaxial layers of Polysilicon Answer Option : A 86. Ids depends on A. Vg B. Vds C. Vdd D. Vss Answer Option : B 87. Ids can be given by A. Qc x Ʈ B. Qc / Ʈ C. Ʈ / Qc D. Qc / 2Ʈ Answer Option : B 88. Transit time can be given by A. L / v B. v / L C. v x L D. v x d Answer Option : A 89. Velocity can be given as A. µ / Vds B. µ / Eds C. µ x Eds D. Eds / µ Answer Option : B 90. Mobility of proton or hole at room temperature is A. 650 cm2/V sec B. 260 cm2/V sec C. 240 cm2/V sec D. 500 cm2/V sec Answer Option : C
81. The dopants are introduced in the active areas of silicon by: a) Diffusion process b A. Diffusion process B. Ion Implantaion process C. Chemical Vapour Deposition D. Either Diffusion or Ion Implantaion Process Answer Option : D
82. To grow the polysilicon gate layer, the chemical used for chemical vapour deposition is: a A. Silicon Nitride(Si4N3) B. Silane gas(SiH4 ) C. Silicon oxide D. None of the mentioned Answer Option : B
83. The process by which Aluminium is grown over the entire wafer , also filling the contact cuts is: A. Sputtering B. Chemical vapour deposition C. Epitaxial growth D. Ion Implantation Answer Option : A
84. Chemical Mechanical Polisihing is used to: A. Remove silicon oxide B. Remove silicon nitride and pad oxide C. Remove polysilicon gate layer D. Reduce the size of the layout Answer Option : B
85. Gate oxide layer consists of A. SiO2 layer, overlaid with a few layers of an oxynitrided oxide b) Only SiO2 Layer c B. Only SiO2 Layer C. SiO2 layer with Polysilicon Layer D. SiO2 layer and stack of epitaxial layers of Polysilicon Answer Option : A
90. Mobility of proton or hole at room temperature is A. 650 cm2/V sec B. 260 cm2/V sec C. 240 cm2/V sec D. 500 cm2/V sec Answer Option : C
