Electronic Engineering McqsVLSI Design 100+ MCQ & Answer VLSI Design | page-10 | Electronic Engineering MCQ And Answer January 28, 2025 DSN MARATHI 91. In resistive region A. Vds greater than (Vgs – Vt) B. Vds lesser than (Vgs – Vt) C. Vgs greater than (Vds – Vt) D. Vgs lesser than (Vds – Vt) Answer Option : B 92. Threshold voltage is negative for A. nMOS depletion B. nMOS enhancement C. pMOS depletion D. pMOS enhancement Answer Option : A 93. The current Ids ______ as Vds increases A. increases B. decreases C. remains fairly constant D. exponentially increases Answer Option : C 94. When the channel pinches off? A. Vgs>Vds B. Vds>Vgs C. Vds>(Vgs-Vth) D. Vgs>(Vds-Vth) Answer Option : C 95. When threshold voltage is more, leakage current will be A. more B. less C. all of the mentioned D. none of the mentioned Answer Option : B 96. MOSFET is used as A. current source B. voltage source C. buffer D. divider Answer Option : A 97. The work function difference is neagative for A. silicon substrate B. polysilicon gate C. both of the mentioned D. none of the mentioned Answer Option : C 98. According to body effect, substrate is biased with respect to A. source B. drain C. gate D. Vss Answer Option : A 99. Increasing Vsb, _____ the threshold voltage A. does not effect B. decreases C. increases D. exponentially increases Answer Option : C 100. Transconductance gives the relationship between A. input current and output voltage B. output current and input voltage C. input current and input voltage D. output current and output voltage Answer Option : B
91. In resistive region A. Vds greater than (Vgs – Vt) B. Vds lesser than (Vgs – Vt) C. Vgs greater than (Vds – Vt) D. Vgs lesser than (Vds – Vt) Answer Option : B
92. Threshold voltage is negative for A. nMOS depletion B. nMOS enhancement C. pMOS depletion D. pMOS enhancement Answer Option : A
93. The current Ids ______ as Vds increases A. increases B. decreases C. remains fairly constant D. exponentially increases Answer Option : C
94. When the channel pinches off? A. Vgs>Vds B. Vds>Vgs C. Vds>(Vgs-Vth) D. Vgs>(Vds-Vth) Answer Option : C
95. When threshold voltage is more, leakage current will be A. more B. less C. all of the mentioned D. none of the mentioned Answer Option : B
97. The work function difference is neagative for A. silicon substrate B. polysilicon gate C. both of the mentioned D. none of the mentioned Answer Option : C
98. According to body effect, substrate is biased with respect to A. source B. drain C. gate D. Vss Answer Option : A
99. Increasing Vsb, _____ the threshold voltage A. does not effect B. decreases C. increases D. exponentially increases Answer Option : C
100. Transconductance gives the relationship between A. input current and output voltage B. output current and input voltage C. input current and input voltage D. output current and output voltage Answer Option : B
